Discrete Semiconductor Products

KSD1616-Y-AP

Obsolete

TRANS NPN 50V 1A TO-92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 50V 1A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	KSD1616-Y-AP

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	750 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
Micro Commercial Components KSD1616-G-AP	Through Hole	300 mV	NPN	TO-92	50 V	750 mW	TO-226-3 TO-92-3	200	100 nA	-55 °C	150 °C	1 A
Micro Commercial Components KSD1616-Y-AP	Through Hole	300 mV	NPN	TO-92	50 V	750 mW	TO-226-3 TO-92-3	135 hFE	100 nA	-55 °C	150 °C	1 A
Micro Commercial Components KSD1616A-Y-AP	Through Hole	300 mV	NPN	TO-92		750 mW	TO-226-3 TO-92-3	135 hFE	100 nA	-55 °C	150 °C	1 A	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 50 V 1 A 160MHz 750 mW Through Hole TO-92

Technical documentation and resources

No documents available