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1N5820-TP
Discrete Semiconductor Products

HER508GP-TP

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1N5820-TP
Discrete Semiconductor Products

HER508GP-TP

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHER508GP-TP
Capacitance @ Vr, F65 pF
Current - Average Rectified (Io)5 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1200$ 0.33

Description

General part information

HER508 Series

Diode 1000 V 5A Through Hole DO-201AD

Documents

Technical documentation and resources

No documents available