Specification	EFC2K102ANUZTDG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	10-SMD, No Lead
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	2.75 mOhm
Supplier Device Package	2.98x1.49, 10-WLCSP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

EFC2K102ANUZTDG Series

Dual N-Channel Power MOSFET 12V, 33A, 2.75mΩ

Part	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Feature	FET Feature
ON Semiconductor EFC2K102ANUZTDG	1.3 V	MOSFET (Metal Oxide)	42 nC	33 A	150 °C	2 N-Channel (Dual)	12 V	3.1 W	Surface Mount	10-SMD No Lead	2.75 mOhm	10-WLCSP 2.98x1.49
ON Semiconductor EFC2K102NUZTDG	1.3 V	MOSFET (Metal Oxide)	42 nC	33 A	150 °C	2 N-Channel (Dual) Common Drain	12 V	3.1 W	Surface Mount	10-SMD No Lead	2.65 mOhm	10-WLCSP 2.98x1.49	Logic Level Gate	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.77
		10	$ 0.68
		25	$ 0.64
		100	$ 0.48
		250	$ 0.41
		500	$ 0.39
		1000	$ 0.30
		2500	$ 0.28
	Digi-Reel®	1	$ 0.77
		10	$ 0.68
		25	$ 0.64
		100	$ 0.48
		250	$ 0.41
		500	$ 0.39
		1000	$ 0.30
		2500	$ 0.28
	Tape & Reel (TR)	5000	$ 0.27
		10000	$ 0.26
		25000	$ 0.25
Newark	Each	2500	$ 0.27
		10000	$ 0.26
ON Semiconductor	N/A	1	$ 0.23

Description

General part information

EFC2K102ANUZTDG Series

EFC2K102NUZTDG features a ultra low on−state resistance and high current with small and thin CSP package. It is best suited for 1 cell lithium−ion battery protection circuit.