
Discrete Semiconductor Products
PHPT60406NYX
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 40 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR
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Discrete Semiconductor Products
PHPT60406NYX
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 40 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PHPT60406NYX |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 230 |
| Frequency - Transition | 153 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-100, SOT-669 |
| Power - Max [Max] | 1.35 W |
| Qualification | AEC-Q100 |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 380 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PHPT60406 Series
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
Documents
Technical documentation and resources