Discrete Semiconductor Products

PJD12P06_L2_00001

Active

60V P-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD12P06_L2_00001

Current - Continuous Drain (Id) @ 25°C	12 A, 2.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.9 nC
Input Capacitance (Ciss) (Max) @ Vds	385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 2 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJD12P06_L2_00001	20 V	TO-252	60 V	2.6 A 12 A	Surface Mount	10 V	P-Channel	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	155 mOhm	4 V	10.9 nC	-55 °C	150 °C	2 W 50 W	385 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 2.6A (Ta), 12A (Tc) 2W (Ta), 50W (Tc) Surface Mount TO-252

Technical documentation and resources