Discrete Semiconductor Products

NZT560A

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 60 V, 3 A, 1 W, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 60 V, 3 A, 1 W, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NZT560A

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	75 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1 W
Supplier Device Package	SOT-223-4
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN Low Saturation Transistor

Part	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Transistor Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type
ON Semiconductor NZT560A	75 MHz	3 A	400 mV	60 V	1 W	NPN	TO-261-4 TO-261AA	-55 °C	150 °C	100 nA	250	SOT-223-4	Surface Mount
ON Semiconductor NZT560	75 MHz	3 A	450 mV	60 V	1 W	NPN	TO-261-4 TO-261AA	-55 °C	150 °C	100 nA	100	SOT-223-4	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.

Technical documentation and resources