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Discrete Semiconductor Products

NGD8205ANT4G

Obsolete

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Power Semiconductor DPAK Image
Discrete Semiconductor Products

NGD8205ANT4G

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNGD8205ANT4G
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)50 A
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Supplier Device PackageTO-252 (DPAK)
Td (on/off) @ 25°C-/5µs
Test Condition300 V, 5 V, 1000 Ohm, 9 A
Vce(on) (Max) @ Vge, Ic1.9 V
Voltage - Collector Emitter Breakdown (Max)390 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NGD8205ANT4G Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injections, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources

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