Discrete Semiconductor Products

PJD10N10_L2_00001

NRND

100V N-CHANNEL MOSFET

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Discrete Semiconductor Products

NRND

100V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD10N10_L2_00001

Current - Continuous Drain (Id) @ 25°C	34.7 A, 2.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	707 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2 W, 34.7 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
Panjit International Inc. PJD10N10_L2_00001	2 W 34.7 W	6 V 10 V	Surface Mount	100 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	130 mOhm	N-Channel	2.6 A 34.7 A	-55 °C	150 °C	12 nC	25 V	707 pF	3.5 V

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General part information

N-Channel 100 V 2.6A (Ta), 34.7A (Tc) 2W (Ta), 34.7W (Tc) Surface Mount TO-252AA

Technical documentation and resources