Discrete Semiconductor Products

BYV98-200-TAP

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DIODE AVALANCHE 200V 4A SOD64

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Discrete Semiconductor Products

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DIODE AVALANCHE 200V 4A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	BYV98-200-TAP

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division BYV98-200-TAP	1.1 V	200 mA 500 ns	10 µA	Through Hole	SOD-64	4 A	Avalanche	200 V	35 ns	Axial SOD-64	175 ░C	-55 C
Vishay General Semiconductor - Diodes Division BYV98-200-TR	1.1 V	200 mA 500 ns	10 µA	Through Hole	SOD-64	4 A	Avalanche	200 V	35 ns	Axial SOD-64	175 ░C	-55 C
Vishay General Semiconductor - Diodes Division BYV98-100-TAP	1.1 V	200 mA 500 ns	10 µA	Through Hole	SOD-64	4 A	Avalanche	100 V	35 ns	Axial SOD-64	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Box (TB)	12500	$ 0.45

General part information

Diode 200 V 4A Through Hole SOD-64

Technical documentation and resources