Discrete Semiconductor Products

FDD8426H

Obsolete

MOSFET N/P-CH 40V 12A/10A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 40V 12A/10A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	FDD8426H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	10 A, 12 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	DPAK (4 Leads + Tab), TO-252-5, TO-252AD
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Configuration	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Feature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor FDD8426H	N and P-Channel	Surface Mount	TO-252 (DPAK)	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	-55 °C	150 °C	10 A 12 A	40 V	53 nC	3 V	Logic Level Gate	12 mOhm	2735 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)

Technical documentation and resources