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Integrated Circuits (ICs)

MT48LC2M32B2B5-6A IT:J

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Micron Technology Inc.

DRAM CHIP SDR SDRAM 64MBIT 2MX32 3.3V 90-PIN VFBGA TRAY

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Integrated Circuits (ICs)

MT48LC2M32B2B5-6A IT:J

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Micron Technology Inc.

DRAM CHIP SDR SDRAM 64MBIT 2MX32 3.3V 90-PIN VFBGA TRAY

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT48LC2M32B2B5-6A IT:J

Access Time	5.4 ns
Clock Frequency	167 MHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	2 M
Memory Size	8 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	90-VFBGA
Supplier Device Package	90-VFBGA (8x13)
Technology	SDRAM
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page	12 ns

MT48LC2M32B2 Series

Part	Clock Frequency	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Access Time	Memory Interface	Memory Format	Package / Case	Package / Case	Package / Case	Memory Type	Technology	Supplier Device Package	Memory Size	Write Cycle Time - Word, Page	Grade	Qualification	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Micron Technology Inc. MT48LC2M32B2TG-55:G TR	183 MHz	2 M	3.6 V	3 V	0 °C	70 °C	Surface Mount	5 ns	Parallel	DRAM	86-TFSOP	10.16 mm	0.4 in	Volatile	SDRAM	86-TSOP II	8 MB
Micron Technology Inc. MT48LC2M32B2TG-55:G	183 MHz	2 M	3.6 V	3 V	0 °C	70 °C	Surface Mount	5 ns	Parallel	DRAM	86-TFSOP	10.16 mm	0.4 in	Volatile	SDRAM	86-TSOP II	8 MB
Micron Technology Inc. MT48LC2M32B2B5-6A AIT:J TR	167 MHz	2 M	3.6 V	3 V	-40 ¯C	85 C	Surface Mount	5.4 ns	Parallel	DRAM	90-VFBGA			Volatile	SDRAM	90-VFBGA (8x13)	8 MB	12 ns	Automotive	AEC-Q100
Micron Technology Inc. MT48LC2M32B2P-55:G	183 MHz	2 M	3.6 V	3 V	0 °C	70 °C	Surface Mount	5 ns	Parallel	DRAM	86-TFSOP	10.16 mm	0.4 in	Volatile	SDRAM	86-TSOP II	8 MB
Micron Technology Inc. MT48LC2M32B2B5-6A AAT:J TR	167 MHz	2 M	3.6 V	3 V	-40 °C	105 °C	Surface Mount	5.4 ns	Parallel	DRAM	90-VFBGA			Volatile	SDRAM	90-VFBGA (8x13)	8 MB	12 ns	Automotive	AEC-Q100
Micron Technology Inc. MT48LC2M32B2P-5:G TR	200 MHz	2 M	3.6 V	3 V	0 °C	70 °C	Surface Mount	4.5 ns	Parallel	DRAM	86-TFSOP	10.16 mm	0.4 in	Volatile	SDRAM	86-TSOP II	8 MB
Micron Technology Inc. MT48LC2M32B2B5-6A AAT:J	167 MHz	2 M	3.6 V	3 V	-40 °C	105 °C	Surface Mount	5.4 ns	Parallel	DRAM	90-VFBGA			Volatile	SDRAM	90-VFBGA (8x13)	8 MB	12 ns	Automotive	AEC-Q100
Micron Technology Inc. MT48LC2M32B2B5-6A IT:J	167 MHz	2 M	3.6 V	3 V	-40 ¯C	85 C	Surface Mount	5.4 ns	Parallel	DRAM	90-VFBGA			Volatile	SDRAM	90-VFBGA (8x13)	8 MB	12 ns
Micron Technology Inc. MT48LC2M32B2B5-7:G	143 MHz	2 M	3.6 V	3 V	0 °C	70 °C	Surface Mount	5.5 ns	Parallel	DRAM	90-VFBGA			Volatile	SDRAM	90-VFBGA (8x13)	8 MB				14 ns	14 ns
Micron Technology Inc. MT48LC2M32B2P-6A IT:J	167 MHz	2 M	3.6 V	3 V	-40 ¯C	85 C	Surface Mount	5.4 ns	Parallel	DRAM	86-TFSOP	10.16 mm	0.4 in	Volatile	SDRAM	86-TSOP II	8 MB	12 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 6.80
		10	$ 5.76
		25	$ 4.82
Digikey	Bulk	1	$ 8.09
		10	$ 7.45
		25	$ 7.29
		50	$ 7.27
		100	$ 6.52
		250	$ 6.32
		500	$ 6.01
		1440	$ 5.80
	N/A	985	$ 8.09

Description

General part information

MT48LC2M32B2 Series

MT48LC2M32B2B5-6A IT:J is a SDR SDRAM. It uses a 64Mb SDRAM and a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks are organized as 8192 rows by 2048 columns by 4 bits. Each of the 16,777,216-bit banks are organized as 2048 rows by 256 columns by 32bits. It supports CAS latency (CL) of 1, 2, and 3.

Documents

Technical documentation and resources