Discrete Semiconductor Products

PHD36N03LT,118

Obsolete

MOSFET N-CH 30V 43.4A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 43.4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD36N03LT,118

Current - Continuous Drain (Id) (Tc)	43.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18.5 nC
Input Capacitance (Ciss) (Max)	690 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	57.6 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Package / Case	Technology	Rds On (Max)	FET Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)
NXP USA Inc. PHD36N03LT,118	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	17 mOhm	N-Channel	690 pF	10 V	4.5 V	43.4 A	2 V	-55 °C	175 °C	57.6 W	Surface Mount	20 V	DPak	30 V	18.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.27	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 43.4A (Tc) 57.6W (Tc) Surface Mount DPAK

Technical documentation and resources