EPC7007BC

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GAN FET HEMT200V18A COTS 4FSMD-B

Discrete Semiconductor Products

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GAN FET HEMT200V18A COTS 4FSMD-B

Technical Specifications

Parameters and characteristics for this part

Specification	EPC7007BC

Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	7 nC
Input Capacitance (Ciss) (Max)	900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-SMD, No Lead
Package Name	4-SMD
Rds On (Max)	28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Positive	6 V
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Technology	Vgs (Max) Positive	Package Name	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)
EPC Space, LLC EPC7007BC	7 nC	-55 °C	150 °C	Surface Mount	900 pF	18 A	28 mOhm	N-Channel	MOSFET (Metal Oxide)	6 V	4-SMD	4-SMD No Lead	200 V	2.5 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 200 V 18A (Tc) Surface Mount 4-SMD

Technical documentation and resources