Discrete Semiconductor Products

SQJQ186E-T1_GE3

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AUTOMOTIVE N-CHANNEL 80 V (D-S)

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Discrete Semiconductor Products

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AUTOMOTIVE N-CHANNEL 80 V (D-S)

Technical Specifications

Parameters and characteristics for this part

Specification	SQJQ186E-T1_GE3

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10552 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 8 x 8
Power Dissipation (Max)	357 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Supplier Device Package	FET Type	Power Dissipation (Max)	Qualification	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Grade	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQJQ186E-T1_GE3	Surface Mount	PowerPAK® 8 x 8	N-Channel	357 W	AEC-Q101	2.3 mOhm	-55 °C	175 ░C	3.5 V	80 V	MOSFET (Metal Oxide)	185 nC	10 V	20 V	PowerPAK® 8 x 8	Automotive	10552 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 245A (Tc) 357W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources