Specification	NTMFS008N12MCT1G

Current - Continuous Drain (Id) @ 25°C	79 A, 12 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	2.7 W, 102 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS008N12MC Series

Single N-Channel Power MOSFET 120V, 79A, 8mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTMFS008N12MCT1G	2705 pF	-55 °C	150 °C	5-DFN (5x6)	8-SOFL	N-Channel	120 V	6 V 10 V	4 V	8-PowerTDFN 5 Leads	2.7 W 102 W	Surface Mount	MOSFET (Metal Oxide)	12 A 79 A	8 mOhm	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.