Discrete Semiconductor Products

RJK03M7DPA-00#J5A

Obsolete

MOSFET N-CH 30V 30A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M7DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK03M7DPA-00#J5A	150 °C	25 W	30 A	6.6 nC	1120 pF	MOSFET (Metal Oxide)	30 V	8-WFDFN Exposed Pad	8-WPAK	N-Channel	Surface Mount	9.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	650	$ 0.46

General part information

The RJK03M7DPA is a N Channel Power MOSFET.

Technical documentation and resources