Discrete Semiconductor Products

UPA2756GR-E1-AT

Obsolete

MOSFET 2N-CH 60V 4A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 60V 4A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2756GR-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Package / Case	Package / Case	Package / Case	Operating Temperature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
Renesas Electronics Corporation UPA2756GR-E1-AT	260 pF	Logic Level Gate	2 N-Channel (Dual)	105 mOhm	MOSFET (Metal Oxide)	8-PSOP	0.173 in	4.4 mm	8-SOIC	150 °C	60 V	4 A	Surface Mount	2.5 V	6 nC	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	346	$ 0.87

General part information

Mosfet Array 60V 4A 2W Surface Mount 8-PSOP

Technical documentation and resources

No documents available