Discrete Semiconductor Products

MBR30200CT

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MBR30200CT

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	TO-220-3
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr
Diotec Semiconductor MBR30200CT	Schottky	TO-220-3	950 mV	15 A	200 V	Through Hole	-50 °C	175 ░C	1 Pair Common Cathode	200 mA 500 ns	TO-220AB	50 µA

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General part information

Diode Array 1 Pair Common Cathode 200 V 15A Through Hole TO-220-3

Technical documentation and resources