Specification	NTMFS5C645NT1G

Current - Continuous Drain (Id) @ 25°C	94 A, 20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.7 W, 80 W
Rds On (Max) @ Id, Vgs [Max]	4.5 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS5C645N Series

Single N-Channel Power Mosfet 60V, 94A, 4.5mΩ

Part	Mounting Type	Supplier Device Package	Supplier Device Package	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NTMFS5C645NT1G	Surface Mount	5-DFN (5x6)	8-SOFL	MOSFET (Metal Oxide)	N-Channel	10 V	4 V	20 V	20 A 94 A	60 V	20.4 nC	-55 °C	175 ░C	8-PowerTDFN 5 Leads	3.7 W 80 W	1510 pF	4.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power Mosfet in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources