Discrete Semiconductor Products

SI7464DP-T1-E3

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MOSFET N-CH 200V 1.8A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 200V 1.8A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7464DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI7464DP-T1-E3	-55 °C	150 °C	1.8 W	N-Channel	PowerPAK® SO-8	4 V	6 V 10 V	Surface Mount	18 nC	240 mOhm	MOSFET (Metal Oxide)	20 V	1.8 A	PowerPAK® SO-8	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 1.8A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources