Discrete Semiconductor Products

BUK9608-55B,118

LTB

MOSFET N-CH 55V 75A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 55V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9608-55B,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	203 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Grade
Nexperia USA Inc. BUK9608-55B,118	45 nC	5280 pF	Surface Mount	203 W	5 V 10 V	15 V	N-Channel	7 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	175 °C	-55 °C	D2PAK	55 V	2 V	MOSFET (Metal Oxide)	75 A	Automotive

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General part information

N-Channel 55 V 75A (Tc) 203W (Tc) Surface Mount D2PAK

Technical documentation and resources