Discrete Semiconductor Products

VS-85HFL20S02

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DIODE GEN PURP 200V 85A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 85A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-85HFL20S02

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-203AB, DO-5, Stud
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-85HFL20S02	200 mA 500 ns	100 µA	Chassis Stud Mount	200 ns	200 V	DO-203AB DO-5 Stud	85 A	125 °C	-40 °C	DO-5	DO-203AB	Standard
Vishay General Semiconductor - Diodes Division VS-85HFL20S05	200 mA 500 ns	100 µA	Chassis Stud Mount	500 ns	200 V	DO-203AB DO-5 Stud	85 A	125 °C	-40 °C	DO-5	DO-203AB	Standard	1.75 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 9.58

General part information

Diode 200 V 85A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources