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8-DFN
Integrated Circuits (ICs)

ISL6625ACRZ-T

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Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVERS

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8-DFN
Integrated Circuits (ICs)

ISL6625ACRZ-T

Active
Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVERS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationISL6625ACRZ-T
Channel TypeSynchronous
Current - Peak Output (Source, Sink)-
Current - Peak Output (Source, Sink)3 A
Driven ConfigurationHalf-Bridge
Gate TypeMOSFET (N-Channel), N-Channel MOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]0 °C
Package / Case8-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]31 ns
Rise / Fall Time (Typ) [custom]18 ns
Supplier Device Package8-DFN (2x2)
Voltage - Supply [Max]13.2 V
Voltage - Supply [Min]5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.97
10$ 2.67
25$ 2.52
100$ 2.19
250$ 2.07
500$ 1.86
1000$ 1.57
2500$ 1.49
Digi-Reel® 1$ 2.97
10$ 2.67
25$ 2.52
100$ 2.19
250$ 2.07
500$ 1.86
1000$ 1.57
2500$ 1.49
Tape & Reel (TR) 6000$ 1.44

Description

General part information

ISL6625A Series

The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. In ISL6625A, the upper and lower gates are both driven to an externally applied voltage. This provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6625A has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature, which is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) via a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.

Documents

Technical documentation and resources