Discrete Semiconductor Products

BC184L_J35Z

Obsolete

TRANS NPN 30V 0.5A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 30V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BC184L_J35Z

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	130
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BC184LC_J35Z	15 nA	150 MHz	625 mW	600 mV	200 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184LC	15 nA	150 MHz	625 mW	600 mV	200 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184LC_D27Z	15 nA	150 MHz	625 mW	600 mV	200 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184L_J35Z	15 nA	150 MHz	350 mW	250 mV	500 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184C_J35Z	15 nA	150 MHz	350 mW	250 mV	500 mA	NPN	150 °C	250	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184L_D27Z	15 nA	150 MHz	350 mW	250 mV	500 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184L	15 nA	150 MHz	350 mW	250 mV	500 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184LC_L34Z	15 nA	150 MHz	625 mW	600 mV	200 mA	NPN	150 °C	130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole
ON Semiconductor BC184_L34Z	15 nA	150 MHz	350 mW	600 mV	100 mA	NPN		130	30 V	TO-92-3	TO-226-3 TO-92-3	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 500 mA 150MHz 350 mW Through Hole TO-92-3

Technical documentation and resources