Discrete Semiconductor Products

SIZF928DT-T1-GE3

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MOSFET 2N-CH 30V 33A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 33A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF928DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	33 A, 88 A, 248 A, 61 A
Drain to Source Voltage (Vdss)	30 V
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	3.9 W, 74 W, 4.5 W, 28 W
Rds On (Max) @ Id, Vgs	0.75 mOhm, 2.45 mOhm
Supplier Device Package	8-PowerPair® (6x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIZF928DT-T1-GE3	Surface Mount	2 V	2 N-Channel (Dual)	30 V	-55 °C	150 °C	3.9 W 4.5 W 28 W 74 W	33 A 61 A 88 A 248 A	MOSFET (Metal Oxide)	8-PowerPair® (6x5)	8-PowerWDFN	0.75 mOhm 2.45 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Surface Mount 8-PowerPair® (6x5)

Technical documentation and resources