UPA2660T1R-E2-AX

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NCH DUAL POWER MOSFET 20V 4.0A 42MOHM 6PINHUSON2020

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Discrete Semiconductor Products

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NCH DUAL POWER MOSFET 20V 4.0A 42MOHM 6PINHUSON2020

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2660T1R-E2-AX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WFDFN Exposed Pad
Power - Max [Max]	2.3 W
Rds On (Max) @ Id, Vgs	62 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)

Nch Dual Power Mosfet 20V 4.0A 42Mohm 6Pinhuson2020

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power - Max [Max]	Technology	FET Feature	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case
Renesas Electronics Corporation UPA2660T1R-E2-AX	4 A	6-HUSON (2x2)	2.3 W	MOSFET (Metal Oxide)	Logic Level Gate	2.5 V	330 pF	Surface Mount	2 N-Channel (Dual)	4.5 nC	150 °C	20 V	62 mOhm	6-WFDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

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