Littelfuse-IXTY8N65X2 MOSFETs Trans MOSFET N-CH 650V 8A 3-Pin(2+Tab) DPAK

Discrete Semiconductor Products

IXTY48P05T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, P-CH, 50V, 48A, TO-252 ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Datasheet

Discrete Semiconductor Products

IXTY48P05T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, P-CH, 50V, 48A, TO-252 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY48P05T

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTY48P05T Series

DiscMSFT PChan-Trench Gate TO-252D

Part	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXTY48P05T	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V	TO-252AA	P-Channel	50 V	10 V	48 A	150 W	15 V	3660 pF	30 mOhm	53 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.41
Digikey	Tube	1	$ 3.99
		70	$ 3.16
		140	$ 2.71
		560	$ 2.41
		1050	$ 2.06
		2030	$ 1.94
		5040	$ 1.86
Newark	Each	1	$ 3.38
		10	$ 3.08
		25	$ 2.77
		50	$ 2.47
		100	$ 2.16
		500	$ 2.14
		1000	$ 1.92
		2500	$ 1.87

Description

General part information

IXTY48P05T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources