Discrete Semiconductor Products

CDST-16-G

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DIODE GEN PURP 75V 150MA SOT23-3

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Discrete Semiconductor Products

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DIODE GEN PURP 75V 150MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	CDST-16-G

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	6 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Speed
Comchip Technology CDST-16-G	Standard	75 V	2 pF	150 °C	Surface Mount	1 µA	150 mA	6 ns	SC-59 SOT-23-3 TO-236-3	SOT-23-3	1.25 V	Any Speed	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 75 V 150mA Surface Mount SOT-23-3

Technical documentation and resources

No documents available