Discrete Semiconductor Products

FMBSA06

Obsolete

TRANS NPN 80V 0.5A SUPERSOT-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 0.5A SUPERSOT-6

Technical Specifications

Parameters and characteristics for this part

Specification	FMBSA06

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FMBSA06	250 mV	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	80 V	700 mW	100 nA	SuperSOT™-6	NPN	100 hFE	Surface Mount	100 MHz	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 700 mW Surface Mount SuperSOT™-6

Technical documentation and resources