Discrete Semiconductor Products

SQD70140EL_GE3

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MOSFET N-CH 100V 30A TO252AA

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 30A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SQD70140EL_GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQD70140EL_GE3	20 V	TO-252AA	Automotive	30 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	71 W	15 mOhm	Surface Mount	100 V	2.5 V	40 nC	AEC-Q101	MOSFET (Metal Oxide)	2100 pF	N-Channel	-55 °C	175 ░C	4.5 V 10 V

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General part information

N-Channel 100 V 30A (Tc) 71W (Tc) Surface Mount TO-252AA

Technical documentation and resources