Discrete Semiconductor Products

VBO130-08NO7

Active

BIPOLAR MODULE - DIODE PWS-E/ BOX

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR MODULE - DIODE PWS-E/ BOX

Technical Specifications

Parameters and characteristics for this part

Specification	VBO130-08NO7

Current - Average Rectified (Io)	122 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	PWS-E
Supplier Device Package	PWS-E
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max)	800 V

Bipolar Module - Diode PWS-E

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Mounting Type	Technology	Voltage - Peak Reverse (Max)
LITTELFUSE VBO130-08NO7	200 µA	1.1 V	122 A	Single Phase	-40 °C	150 °C	PWS-E	PWS-E	Chassis Mount	Standard	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources