Discrete Semiconductor Products

PMPB50ENEX

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MOSFET DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB50ENEX

Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	271 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Technology	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMPB50ENEX	6-UDFN Exposed Pad	4.5 V 10 V	10 nC	271 pF	2.5 V	43 mOhm	DFN2020MD-6	20 V	1.9 W	MOSFET (Metal Oxide)	Surface Mount	N-Channel	30 V	6.9 A	-55 °C	175 ░C

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General part information

N-Channel 30 V 6.9A (Ta) 1.9W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources