Discrete Semiconductor Products

FDC6392S

Obsolete

MOSFET P-CH 20V 2.2A SUPERSOT6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.2A SUPERSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	FDC6392S

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	960 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	FET Feature	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDC6392S	SOT-23-6 Thin TSOT-23-6	Schottky Diode (Isolated)	12 V	150 mOhm	2.2 A	SuperSOT™-6	P-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	Surface Mount	5.2 nC	2.5 V 4.5 V	960 mW	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.2A (Ta) 960mW (Ta) Surface Mount SuperSOT™-6

Technical documentation and resources