Discrete Semiconductor Products

SSM6J50TU,LF

LTB

MOSFET P-CH 20V 2.5A UF6

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 2.5A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J50TU,LF

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.2 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6J50TU,LF	2.5 A	P-Channel	500 mW	10 V	6-SMD Flat Leads	150 °C	Surface Mount	800 pF	1.2 V	20 V	UF6	4.5 V	2 V	MOSFET (Metal Oxide)	64 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources