BUK9M8R5-40HX

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MOSFET N-CH 40V 40A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 40A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M8R5-40HX

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	59 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Grade	Technology	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK9M8R5-40HX	40 V	2.15 V	Automotive	MOSFET (Metal Oxide)	1800 pF	AEC-Q101	59 W	4.5 V 10 V	N-Channel	Surface Mount	28 nC	LFPAK33	16 V	-55 °C	175 ░C	8.5 mOhm

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General part information

N-Channel 40 V 40A (Tc) 59W (Tc) Surface Mount LFPAK33

Technical documentation and resources