Discrete Semiconductor Products

EMB10FHAT2R

NRND

RF TRANSISTOR, AEC-Q101, PNP, 2.2K/47K

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Discrete Semiconductor Products

NRND

RF TRANSISTOR, AEC-Q101, PNP, 2.2K/47K

Technical Specifications

Parameters and characteristics for this part

Specification	EMB10FHAT2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Qualification	AEC-Q101
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	EMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Qualification	Current - Collector Cutoff (Max) [Max]	Package / Case	Resistor - Base (R1)	Mounting Type	Grade	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Rohm Semiconductor EMB10FHAT2R	AEC-Q101	500 nA	SOT-563 SOT-666	2.2 kOhm	Surface Mount	Automotive	100 mA	250 MHz	47 kOhms	50 V	80	2 PNP - Pre-Biased (Dual)	300 mV	EMT6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical documentation and resources