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SOT 23-3
Discrete Semiconductor Products

MMBTA56LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 500 MA, 225 MW, SOT-23, SURFACE MOUNT

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SOT 23-3
Discrete Semiconductor Products

MMBTA56LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 500 MA, 225 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBTA56LT3G
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition50 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.18
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
2000$ 0.04
5000$ 0.03
Digi-Reel® 1$ 0.18
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
2000$ 0.04
5000$ 0.03
Tape & Reel (TR) 10000$ 0.03
20000$ 0.03
30000$ 0.02
50000$ 0.02
70000$ 0.02
100000$ 0.02
250000$ 0.02
500000$ 0.02
NewarkEach (Supplied on Full Reel) 18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBTA56L Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.