Discrete Semiconductor Products

MBR10U200HE3-TP

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DIODE SCHOTTKY 200V 10A TO277

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Discrete Semiconductor Products

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DIODE SCHOTTKY 200V 10A TO277

Technical Specifications

Parameters and characteristics for this part

Specification	MBR10U200HE3-TP

Capacitance @ Vr, F	160 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-277
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Speed	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Grade	Current - Reverse Leakage @ Vr
Micro Commercial Components MBR10U150-TP	Surface Mount	840 mV	Schottky	200 mA 500 ns	10 A	3-PowerDFN TO-277	TO-277	150 °C	-55 °C
Micro Commercial Components MBR10U200HE3-TP	Surface Mount		Schottky	200 mA 500 ns	10 A	3-PowerDFN TO-277	TO-277	150 °C	-55 °C	200 V	AEC-Q101	950 mV	160 pF	Automotive	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 10A Surface Mount TO-277

Technical documentation and resources