Discrete Semiconductor Products

FDP8441_F085

Obsolete

MOSFET N-CH 40V 23A/80A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 23A/80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	FDP8441_F085

Current - Continuous Drain (Id) @ 25°C	80 A, 23 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel Logic Level PowerTrench<sup>®</sup> MOSFET 40V, 277A, 2.2mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade	Rds On (Max) @ Id, Vgs
ON Semiconductor FDP8440	-55 °C	175 ░C	24740 pF	20 V	40 V	Through Hole	306 W	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	450 nC	TO-220-3	3 V	TO-220-3	100 A
ON Semiconductor FDP8441_F085	-55 °C	175 ░C	15000 pF	20 V	40 V	Through Hole	300 W	N-Channel	10 V	MOSFET (Metal Oxide)		TO-220-3	4 V	TO-220-3	23 A 80 A	280 nC	AEC-Q101	Automotive	2.7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench®MOSFET, Logic Level, 40V, 277A, 2.2mΩ

Technical documentation and resources