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1SS196(TE85L,F)
Discrete Semiconductor Products

1SS196(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

1SS196(TE85L,F)
Discrete Semiconductor Products

1SS196(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Technical Specifications

Parameters and characteristics for this part

Specification1SS196(TE85L,F)
Capacitance3 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage500 nA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)125 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSC-59-3
Reverse Recovery Time (trr)4 ns
SpeedAny Speed, Small Signal
Speed - Fast Recovery (Maximum)200 mA
Speed - Small Signal Current Max200 mA, 200 mA, 200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max)1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.28<4d
10$ 0.17
100$ 0.11
500$ 0.08
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06<4d
6000$ 0.05
9000$ 0.05
15000$ 0.04
21000$ 0.04
30000$ 0.04

CAD

3D models and CAD resources for this part

Description

General part information

1SS196 Series

Diode 80 V 100mA Surface Mount SC-59-3

Documents

Technical documentation and resources