Discrete Semiconductor Products

1N4006T-G

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RECTIFIERS DIODE GEN PURP 800V 1A DO41

Discrete Semiconductor Products

Active

RECTIFIERS DIODE GEN PURP 800V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4006T-G

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	800 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Capacitance	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Package / Case	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Package Name	Current - Reverse Leakage	Technology
Comchip Technology 1N4006T-G	15 pF	Through Hole	800 V	Axial DO-204AL DO-41	1.1 V	150 °C	-55 °C	1 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	DO-41	5 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 800 V 1A Through Hole DO-41

Technical documentation and resources

No documents available