Specification	FCP16N60N-F102

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2170 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	134.4 W
Rds On (Max) @ Id, Vgs	199 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCP16N60N Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Technology	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FCP16N60N	600 V	134.4 W	TO-220-3	MOSFET (Metal Oxide)	30 V	N-Channel	16 A	199 mOhm	TO-220-3	4 V	10 V	-55 °C	150 °C	Through Hole	2170 pF
ON Semiconductor FCP16N60N-F102	600 V	134.4 W	TO-220F	MOSFET (Metal Oxide)	30 V	N-Channel	16 A	199 mOhm	TO-220-3 Full Pack	4 V	10 V	-55 °C	150 °C	Through Hole	2170 pF
ON Semiconductor FCP16N60N	600 V	134.4 W	TO-220-3	MOSFET (Metal Oxide)	30 V	N-Channel	16 A	199 mOhm	TO-220-3	4 V	10 V	-55 °C	150 °C	Through Hole	2170 pF
ON Semiconductor FCP16N60	600 V	167 W	TO-220-3	MOSFET (Metal Oxide)	30 V	N-Channel	16 A	260 mOhm	TO-220-3	5 V	10 V	-55 °C	150 °C	Through Hole	2250 pF	70 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCP16N60N Series

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing