Specification	4N32SM

Current - DC Forward (If) (Max) [Max]	80 mA
Current - Output / Channel	150 mA
Current Transfer Ratio (Min) [Min]	500 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	Darlington with Base
Package / Case	6-SMD, Gull Wing
Supplier Device Package	6-SMD
Turn On / Turn Off Time (Typ)	5 µs
Turn On / Turn Off Time (Typ) [Max]	100 µs
Vce Saturation (Max) [Max]	1 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	30 V

4N32M Series

6-Pin DIP General Purpose Photodarlington Optocoupler

Part	Package / Case	Voltage - Isolation	Output Type	Voltage - Output (Max) [Max]	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output / Channel	Current Transfer Ratio (Min) [Min]	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Number of Channels	Vce Saturation (Max) [Max]	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ) [Max]	Mounting Type	Package / Case	Package / Case	Package / Case
ON Semiconductor 4N32SD	6-SMD Gull Wing	5300 Vrms	Darlington with Base	30 V	DC	100 °C	-55 °C	150 mA	500 %	80 mA	6-SMD	1	1 V	5 µs	100 µs	Surface Mount
ON Semiconductor 4N32M	6-DIP	4170 Vrms	Darlington with Base	30 V	DC	100 °C	-40 °C	150 mA	500 %	80 mA	6-DIP	1	1 V	5 µs	100 µs	Through Hole	0.3 in	7.62 mm
ON Semiconductor 4N32	6-DIP	5300 Vrms	Darlington with Base	30 V	DC	100 °C	-55 °C	150 mA	500 %	80 mA	6-DIP	1	1 V	5 µs	100 µs	Through Hole	0.3 in	7.62 mm
ON Semiconductor 4N32S	6-SMD Gull Wing	5300 Vrms	Darlington with Base	30 V	DC	100 °C	-55 °C	150 mA	500 %	80 mA	6-SMD	1	1 V	5 µs	100 µs	Surface Mount
ON Semiconductor 4N32SM	6-SMD Gull Wing	4170 Vrms	Darlington with Base	30 V	DC	100 °C	-40 °C	150 mA	500 %	80 mA	6-SMD	1	1 V	5 µs	100 µs	Surface Mount
ON Semiconductor 4N32300W	6-DIP	5300 Vrms	Darlington with Base	30 V	DC	100 °C	-55 °C	150 mA	500 %	80 mA	6-DIP	1	1 V	5 µs	100 µs	Through Hole		10.16 mm	10.16 mm
ON Semiconductor 4N32VM	6-DIP	4170 Vrms	Darlington with Base	30 V	DC	100 °C	-40 °C	150 mA	500 %	80 mA	6-DIP	1	1 V	5 µs	100 µs	Through Hole	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Technical documentation and resources