Discrete Semiconductor Products

BCW60C,235

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TRANS NPN 32V 0.1A TO-236AB

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Discrete Semiconductor Products

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TRANS NPN 32V 0.1A TO-236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BCW60C,235

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Supplier Device Package	Mounting Type	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Grade	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP BCW60C,235	TO-236AB	Surface Mount	150 °C	250 MHz	100 mA	AEC-Q101	250	NPN	Automotive	250 mW	20 nA	SC-59 SOT-23-3 TO-236-3	32 V	550 mV
Freescale Semiconductor - NXP BCW60B,235	TO-236AB	Surface Mount	150 °C	250 MHz	100 mA	AEC-Q101		NPN	Automotive	250 mW	20 nA	SC-59 SOT-23-3 TO-236-3	32 V	550 mV
Freescale Semiconductor - NXP BCW60D,215	TO-236AB	Surface Mount	150 °C	250 MHz	100 mA	AEC-Q101	380	NPN	Automotive	250 mW	20 nA	SC-59 SOT-23-3 TO-236-3	32 V	550 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 32 V 100 mA 250MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources