Discrete Semiconductor Products

AOTF2142L

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MOSFET N-CH 40V 112A TO220F

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Discrete Semiconductor Products

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MOSFET N-CH 40V 112A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF2142L

Current - Continuous Drain (Id) @ 25°C	112 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	41 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOTF2142L	TO-220F	40 V	20 V	TO-220-3 Full Pack	N-Channel	100 nC	175 °C	-55 °C	MOSFET (Metal Oxide)	41 W	1.9 mOhm	112 A	Through Hole	2.3 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 112A (Tc) 41W (Tc) Through Hole TO-220F

Technical documentation and resources