Discrete Semiconductor Products

SIL04P06Y-TP

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MOSFET P-CHANNEL MOSFET

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Discrete Semiconductor Products

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MOSFET P-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SIL04P06Y-TP

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.27 nC
Input Capacitance (Ciss) (Max) @ Vds	505 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	FET Type
Micro Commercial Components SIL04P06Y-TP	MOSFET (Metal Oxide)	60 V	4.5 V 10 V	1.56 W	-55 °C	150 °C	SOT-23-6L	505 pF	4.27 nC	3.5 A	2.5 V	Surface Mount	85 mOhm	SOT-23-6	20 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.32

General part information

P-Channel 60 V 3.5A 1.56W Surface Mount SOT-23-6L

Technical documentation and resources