Discrete Semiconductor Products

SISS26DN-T1-GE3

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MOSFET N-CH 60V 60A PPAK1212-8S

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A PPAK1212-8S

Technical Specifications

Parameters and characteristics for this part

Specification	SISS26DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SISS26DN-T1-GE3	6 V 10 V	60 V	57 W	Surface Mount	3.6 V	PowerPAK® 1212-8S	4.5 mOhm	PowerPAK® 1212-8S	20 V	1710 pF	60 A	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel

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General part information

N-Channel 60 V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources