Discrete Semiconductor Products

MCU80P06Y-TP

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P-CHANNEL MOSFET,DPAK

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU80P06Y-TP

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	5450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs [Max]	8.4 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs
Micro Commercial Components MCU80P06Y-TP	MOSFET (Metal Oxide)	60 V	18 V	120 W	4 V	P-Channel	10 V	8.4 mOhm	-55 °C	150 °C	5450 pF	TO-252 (DPAK)	80 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	82 nC
Micro Commercial Components MCU80N06A-TP	MOSFET (Metal Oxide)	60 V	20 V			N-Channel	4.5 V 10 V		-55 °C	175 ░C	1990 pF	DPAK		DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount		8 mOhm	68 W	2.2 V	31 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 80A 120W (Tj) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available