Specification	NTR5105PT1G

Current - Continuous Drain (Id) @ 25°C	196 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1 nC
Input Capacitance (Ciss) (Max) @ Vds	30.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	347 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTR5105P Series

Single P−Channel Power MOSFET -60V, -211mA, 5Ω

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTR5105PT1G	-55 °C	150 °C	Surface Mount	5 Ohm	20 V	MOSFET (Metal Oxide)	196 mA	60 V	SC-59 SOT-23-3 TO-236-3	4.5 V 10 V	3 V	SOT-23-3 (TO-236)	347 mW	30.3 pF	P-Channel	1 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET−60 V, −211 mA, Single P−ChannelSOT−23 Package

Technical documentation and resources