Discrete Semiconductor Products

RFX10TF6S

NRND

DIODE GEN PURP 600V 10A TO220NFM

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 600V 10A TO220NFM

Technical Specifications

Parameters and characteristics for this part

Specification	RFX10TF6S

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220NFM
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.5 V

Part	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Reverse Recovery Time (trr)	Mounting Type	Technology
Rohm Semiconductor RFX10TF6S	TO-220-2 Full Pack	10 µA	TO-220NFM	2.5 V	10 A	150 °C	600 V	200 mA 500 ns	30 ns	Through Hole	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Through Hole TO-220NFM

Technical documentation and resources

No documents available